PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Infineon Technologies AG

Description

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110 *2170 MHz .
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

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Datasheet Specifications

Part number: PTF210901E
Manufacturer: Infineon ↗ Technologies AG
File Size: 266.35 KB
Datasheet: PTF210901E_InfineonTechnologiesAG.pdf
Description: LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Features

* Internal matching for wideband performance Typical two
* carrier 3GPP WCDMA performance - Average output power = 19 W at
* 37 dBc - Efficiency = 25% Typical CW performance - Output power at P
* 1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protec

Applications

* from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two
* Carrier WCDMA Drive
* Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 4

PTF210901E Distributors

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PTF210901E LDMOS Power Field Effect Transistor 2110-2170 MHz Infineon Technologies AG

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