PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

Infineon Technologies AG

Description

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110 *2170 MHz .
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

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Datasheet Specifications

Part number: PTF210301E
Manufacturer: Infineon ↗ Technologies AG
File Size: 337.86 KB
Datasheet: PTF210301E_InfineonTechnologiesAG.pdf
Description: LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

Features

* Broadband internal matching Typical two
* carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 =
* 37 dBc Typical CW performance - Output power at P
* 1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protec

PTF210301E Distributors

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PTF210301E LDMOS Power Field Effect Transistor 2110-2170 MHz Infineon Technologies AG

Infineon Technologies AG PTF210301E-like datasheet