PTF080901 - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

Infineon Technologies AG

Datasheet Details

The PTF080901 is a 90 W, internally matched.

Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz 0 55 Efficiency 50 45.

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