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PTF080901E - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
  • 1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz 0 55 Efficiency 50 45.

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Datasheet Details

Part number PTF080901E
Manufacturer Infineon Technologies AG
File Size 205.95 KB
Description LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Datasheet download datasheet PTF080901E Datasheet

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PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.
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