NJW0281G Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor NJW0281G .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min). Good Linearity of hFE. Complement to Type NJW0302G. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: NJW0281G
Manufacturer: Inchange Semiconductor
File Size: 213.22 KB
Datasheet: NJW0281G-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

NJW0281G Distributors

📁 Related Datasheet

NJW0281 NJW0302 NJW0302G NJW1102 NJW1102A NJW1103

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NJW0281G Silicon NPN Power Transistor Inchange Semiconductor

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