NJW0281 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min). Good Linearity of hFE. Complement to Type NJW0302. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: NJW0281
Manufacturer: INCHANGE
File Size: 211.05 KB
Datasheet: NJW0281-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

NJW0281 Distributors

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NJW0281 NPN Transistor INCHANGE

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