NJW0302G PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min). Good Linearity of hFE. Complement to Type NJW0281G. Minimum Lot-to-.

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Datasheet Specifications

Part number: NJW0302G
Manufacturer: INCHANGE
File Size: 202.32 KB
Datasheet: NJW0302G-INCHANGE.pdf
Description: PNP Power Transistor

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

NJW0302G Distributors

📁 Related Datasheet

NJW0281G NJW1102 NJW1102A NJW1103 NJW1104 NJW1105

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NJW0302G PNP Power Transistor INCHANGE

INCHANGE NJW0302G-like datasheet