Datasheet4U Logo Datasheet4U.com

MMBR951L

The MMBR951L is Silicon NPN RF Transistor designed by Inchange Semiconductor.

Product Overview

📥 Download Datasheet

Datasheet preview – MMBR951L

Datasheet Details

Part number MMBR951L
Manufacturer Inchange Semiconductor
File Size 170.33 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet MMBR951L-InchangeSemiconductor.pdf
Additional preview pages of the MMBR951L datasheet.

Product details

Description

Low Noise High Current-Gain Bandwidth Product APPLICATIONS Designed for use in high gain , low noise small-signal amplifiers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 V 100 mA 0.322 W 150 ℃ -55~150 ℃ isc website：ww

📁 Similar Datasheet

  • MMBR951LT1 - NPN Silicon Low Noise / High-Frequency Transistors (Motorola)
  • MMBR951ALT1 - NPN Silicon Low Noise / High-Frequency Transistors (Motorola)
  • MMBR901 - NPN Silicon High-Frequency Transistor (Lunsure Electronic)
  • MMBR901LT1 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MMBR901LT3 - NPN Silicon High-Frequency Transistor (Motorola)
  • MMBR911 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MMBR911LT1 - NPN Silicon High-Frequency Transistor (Motorola)
  • MMBR911LT1G - NPN SILICON HIGH-FREQUENCY TRANSISTOR (Advanced Power Technology)
Other Datasheets by Inchange Semiconductor
Published: |