Datasheet4U Logo Datasheet4U.com

MMBR901L - Silicon NPN RF Transistor

The MMBR901L by Inchange Semiconductor is a Silicon NPN RF Transistor. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the MMBR901L Silicon NPN RF Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number MMBR901L
Manufacturer Inchange Semiconductor
File Size 95.90 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet MMBR901L-InchangeSemiconductor.pdf
Additional preview pages of the MMBR901L datasheet.

MMBR901L Product details

Description

Low Noise High Power Gain- Gpe = 12.0 dB TYP.@ f = 1 GHz APPLICATIONS Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 30 mA 0.3 W 1

📁 MMBR901L Similar Datasheet

  • MMBR901LT1 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MMBR901LT3 - NPN Silicon High-Frequency Transistor (Motorola)
  • MMBR901 - NPN Silicon High-Frequency Transistor (Lunsure Electronic)
  • MMBR911 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MMBR911LT1 - NPN Silicon High-Frequency Transistor (Motorola)
  • MMBR911LT1G - NPN SILICON HIGH-FREQUENCY TRANSISTOR (Advanced Power Technology)
  • MMBR911MLT1 - RF & MICROWAVE TRANSISTORS (Microsemi)
  • MMBR920 - NPN SIlicon High Frequency Transistor (Motorola)
Other Datasheets by Inchange Semiconductor
Published: |