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MMBR920L - Silicon NPN RF Transistor

Description

NF= 2.4dB TYP.

Gpe= 15dB TYP.

components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz.

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L DESCRIPTION ·Low Noise NF= 2.4dB TYP. @ f= 500MHz ·High Gain Gpe= 15dB TYP. @ f= 500MHz APPLICATIONS ·Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 35 mA 0.35 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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