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MJD127 - Silicon PNP Darlington Power Transistor

The MJD127 by Inchange Semiconductor is a Silicon PNP Darlington Power Transistor. Below is the official datasheet preview.

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Official preview page of the MJD127 Silicon PNP Darlington Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number MJD127
Manufacturer Inchange Semiconductor
File Size 215.94 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet MJD127-InchangeSemiconductor.pdf
Additional preview pages of the MJD127 datasheet.

MJD127 Product details

Description

Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V

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