Datasheet4U Logo Datasheet4U.com

MJD128 - Silicon PNP Darlington Power Transistor

📥 Download Datasheet

Preview of MJD128 PDF
datasheet Preview Page 2

Datasheet Details

Part number MJD128
Manufacturer Inchange Semiconductor
File Size 206.41 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet MJD128-InchangeSemiconductor.pdf

MJD128 Product details

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Ba

📁 MJD128 Similar Datasheet

  • MJD128T4G - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD122-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127 - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD127-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127S - PNP Transistor (MCC)
  • MJD127T4 - Complementary power Darlington transistors (ST Microelectronics)
  • MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
Other Datasheets by Inchange Semiconductor
  • MJD117 - Silicon PNP Power Transistor
  • MJD148 - Silicon NPN Power Transistor
  • MJD210 - Silicon PNP Power Transistor
  • MJD243 - Silicon NPN Power Transistor
  • MJD253 - Silicon PNP Power Transistor
  • MJD2955 - Silicon PNP Power Transistor
Published: |