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MJD210 - Silicon PNP Power Transistor

The MJD210 by Inchange Semiconductor is a Silicon PNP Power Transistor. Below is the official datasheet preview.

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Official preview page of the MJD210 Silicon PNP Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number MJD210
Manufacturer Inchange Semiconductor
File Size 206.59 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJD210-InchangeSemiconductor.pdf
Additional preview pages of the MJD210 datasheet.

MJD210 Product details

Description

High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

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