Datasheet Details
| Part number | FRM9130 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.28 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet |
 FRM9130-InchangeSemiconductor.pdf
|
| Part number | FRM9130 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.28 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet |
FRM9130-InchangeSemiconductor.pdf
|
-6A, -100V, RDS(on) = 0.55Ω Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures.Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -100 V Gate-Sour
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