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FRM9230H P-Channel Power MOSFET

FRM9230H Description

FRM9230D, FRM9230R, FRM9230H June 1998 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AA .
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratin.

FRM9230H Features

* 4A, -200V, RDS(on) = 1.30Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

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