Datasheet Details
| Part number | 2SD2562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.92 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD2562_InchangeSemiconductor.pdf
|
| Part number | 2SD2562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.92 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD2562_InchangeSemiconductor.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas
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