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2SD2561 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) Complement to Type 2SB1648 Minimum Lot-to-Lot variations for robust device per

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) ·Complement to Type 2SB1648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.
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