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2SD218 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SD218
Manufacturer Inchange Semiconductor
File Size 208.79 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD218-InchangeSemiconductor.pdf

2SD218 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect

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