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2SD1606 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SD1606
Manufacturer Inchange Semiconductor
File Size 210.40 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1606-InchangeSemiconductor.pdf

2SD1606 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications.

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