2SC643 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC643 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-L.

📥 Download Datasheet

2SC643 Datasheet Preview — Preview of 2SC643 PDF

Datasheet Specifications

Part number: 2SC643
Manufacturer: Inchange Semiconductor
File Size: 177.28 KB
Datasheet: 2SC643_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2

2SC643 Distributors

📁 Related Datasheet

2SC643A 2SC640 2SC641 2SC6000 2SC6010 2SC6011

📌 All Tags

2SC643 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC643-like datasheet