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2SC6090 Silicon NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 .
Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min). High Speed Switching. 100% avalanche tested. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number
2SC6090
Manufacturer
Inchange Semiconductor
File Size
170.54 KB
Datasheet
2SC6090-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

Applications

* Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Colle

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