2SC6012 - Silicon NPN triple diffusion Power Transistor

Panasonic Semiconductor

Datasheet Details

Part number	2SC6012
Manufacturer	Panasonic Semiconductor
File Size	89.03 KB
Description	Silicon NPN triple diffusion Power Transistor
Datasheet	2SC6012_PanasonicSemiconductor.pdf

High breakdown voltage, and high reliability through the use of a glass passivation layer.
High-speed switching.
Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
Collector power dissip.

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Published: Sep 23, 2005 |