2SC3856-P - Silicon NPN Transistor

Inchange Semiconductor

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Datasheet Details

Part number	2SC3856-P
Manufacturer	Inchange Semiconductor
File Size	581.72 KB
Description	Silicon NPN Transistor
Datasheet	2SC3856-P-InchangeSemiconductor.pdf

2SC3856-P Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) Good Linearity of hFE APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 130 W 150 ℃ Tstg Sto

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Published: Jun 23, 2016 |