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2SC3856-P - Silicon NPN Transistor

The 2SC3856-P by Inchange Semiconductor is a Silicon NPN Transistor. Below is the official datasheet preview.

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Official preview page of the 2SC3856-P Silicon NPN Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2SC3856-P
Manufacturer Inchange Semiconductor
File Size 581.72 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3856-P-InchangeSemiconductor.pdf
Additional preview pages of the 2SC3856-P datasheet.

2SC3856-P Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) Good Linearity of hFE APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 130 W 150 ℃ Tstg Sto

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