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2N6667 - Silicon PNP Power Transistor

The 2N6667 by Inchange Semiconductor is a Silicon PNP Power Transistor. Below is the official datasheet preview.

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Official preview page of the 2N6667 Silicon PNP Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2N6667
Manufacturer Inchange Semiconductor
File Size 144.47 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2N6667-InchangeSemiconductor.pdf
Additional preview pages of the 2N6667 datasheet.

2N6667 Product details

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A Complement to Type 2N6387 APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage

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