Datasheet Details
Part number:
2N6661
Manufacturer:
Seme LAB
File Size:
75.04 KB
Description:
N-channel enhancement mode power mosfet.
Datasheet Details
Part number:
2N6661
Manufacturer:
Seme LAB
File Size:
75.04 KB
Description:
N-channel enhancement mode power mosfet.
2N6661, N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain Source Voltage 90V VGS Gate Source Voltage ±20V ID Continuous Drain Current TC
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