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2N6666 - Silicon PNP Darlington Power Transistor

The 2N6666 by Inchange Semiconductor is a Silicon PNP Darlington Power Transistor. Below is the official datasheet preview.

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Official preview page of the 2N6666 Silicon PNP Darlington Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2N6666
Manufacturer Inchange Semiconductor
File Size 82.43 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet 2N6666-InchangeSemiconductor.pdf
Additional preview pages of the 2N6666 datasheet.

2N6666 Product details

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A Complement to Type 2N6386 APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage

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