MMIX4B12N300 - Bipolar MOS Transistor

Product Overview

IXYS

Part number	MMIX4B12N300
Manufacturer	IXYS
File Size	309.90 KB
Description	Bipolar MOS Transistor
Datasheet	MMIX4B12N300 Datasheet
Additional preview pages of the MMIX4B12N300 datasheet.

z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = 0.8.
VCES, VGE = 0V Note 2, TJ = 125°C 25 μA 1 mA IGES VCE = 0V, VGE = ± 20V ±100 nA V.

📁 Similar Datasheet

Other Datasheets by IXYS

Published: Feb 9, 2025 |