MMIX1G75N250 Datasheet (IXYS) - High Voltage IGBT

MMIX1G75N250, High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Electrically Isolated Tab) C Symbol VCES VCES VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms 110 A 65 A 580 A VGE= 15V, TVJ = 12

MMIX1G75N250 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge Pulser Circuits Advantages High Power Density Easy