MMIX1Y25N250CV1 Datasheet (IXYS)

MMIX1Y25N250CV1, High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0V C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load

MMIX1Y25N250CV1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Heatsink Surface

* 2500V~ Electrical Isolation

* Anti-Parallel Diode

* High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES