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MMIX1Y25N250CV1 - High Voltage IGBT

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IXYS

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MMIX1Y25N250CV1 High Voltage IGBT by IXYS - Datasheet Preview — Datasheet preview – MMIX1Y25N250CV1

Datasheet Details

Part number	MMIX1Y25N250CV1
Manufacturer	IXYS
File Size	261.00 KB
Description	High Voltage IGBT
Datasheet	MMIX1Y25N250CV1 Datasheet
Additional preview pages of the MMIX1Y25N250CV1 datasheet.

Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Heatsink Surface.
2500V~ Electrical Isolation.
Anti-Parallel Diode.
High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = VCES, VGE = 0V Note 2, TJ = 100C 25 μA 100 μA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE(sat) IC = 25A, VGE.

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Published: Feb 11, 2025 |