MMIX1F44N100Q3 Datasheet (IXYS)

MMIX1F44N100Q3, Power MOSFET

Advance Technical Information HiperFETTM Power MOSFET Q3-Class (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C MMIX1F44N100Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 30A 245mΩ 300ns D G S Maximum Ratings 1000 1000 ±30 ±40 30 110 44 4 50 694 -55 +150 150 -55 +150 www.DataSheet.

MMIX1F44N100Q3 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isol