MMIX1F44N100Q3 - Power MOSFET

Product Overview

IXYS

Part number	MMIX1F44N100Q3
Manufacturer	IXYS
File Size	235.35 KB
Description	Power MOSFET
Datasheet	MMIX1F44N100Q3 Datasheet
Additional preview pages of the MMIX1F44N100Q3 datasheet.

Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isolated Tab D TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C S G G = Gate S = Source D = Drain 1.6mm (0.062 in. ) from Case for 10s Plastic Body.

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Published: Sep 11, 2012 |