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IXYX30N170CV1 - IGBT

IXYS

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Datasheet Details

Part number	IXYX30N170CV1
Manufacturer	IXYS
File Size	199.01 KB
Description	IGBT
Datasheet	IXYX30N170CV1-IXYS.pdf

IXYX30N170CV1 Product details

Features

High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA.

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Published: Aug 19, 2016 |