IXYX30N170CV1 Datasheet (IXYS)

IXYX30N170CV1, IGBT

High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYX30N170CV1 VCES = 1700V IC110 = 30A VCE(sat)  3.7V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1700 1700 ±20 ±30 V V V V TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms CVlGaEm=p1e5dVIn, dTuVJc=tiv1e5L0o°Cad, RG = 2.7 108 30 45 255 ICM = 12

IXYX30N170CV1 Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8