IXYX110N120A4 - Ultra Low-Vsat PT IGBT

Datasheet Details

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.5 6.5 V.

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Published: Feb 10, 2025 |