IXYR50N120C3D1 Datasheet (IXYS)

IXYR50N120C3D1, High-Speed IGBT

1200V XPTTM IGBT GenX3TM w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR50N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 90°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 56 A 32

IXYR50N120C3D1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Anti-Parallel Ultra Fast Diode

* High Current Handling Capab