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IXYA15N65C3D1 - IGBT

Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Anti-Parallel Fast Diode.
  • Short Circuit Capability.
  • International Standard Packages Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat)  2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 38 15 23 80 5 100 ICM = 30 @VCE VCES 8 200 -55 ... +175 175 -55 ...
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