IXYN80N90C3H1 Datasheet (IXYS)

IXYN80N90C3H1, IGBT

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN80N90C3H1 VCES = 900V IC90 = 70A VCE(sat)  2.7V tfi(typ) = 86ns E Symbol VCES VCGR VGES VGEM IC25 IICF19100 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz t = 1min

IXYN80N90C3H1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Isolation Voltage 2500V~

* Anti-Parallel Sonic Diode

* Positive Thermal Coefficient of Vce(sat)

* High Current Handling Capability

* International Standard Package Symbol Test Conditions (TJ = 25C, Unless Otherwise