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IXYN100N120B3H1 - IGBT

Features

  • z Optimized for 5-30kHZ Switching z Square RBSOA z 2500V~ Isolation Voltage z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120B3H1 Extreme Light Punch Through IGBT for 5-30 kHz Switching E VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 76A 2.6V 240ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 165 A 76 A 42 A 480 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 690 A W -55 ... +150 150 -55 ...
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