Datasheet4U.com

IXYN30N170CV1 - High Voltage IGBT

IXYS

📥 Download Datasheet

IXYN30N170CV1 Datasheet Preview — Preview of IXYN30N170CV1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXYN30N170CV1
Manufacturer	IXYS
File Size	214.81 KB
Description	High Voltage IGBT
Datasheet	IXYN30N170CV1-IXYS.pdf

IXYN30N170CV1 Product details

Features

International Standard Package.
miniBLOC, with Aluminium Nitride Isolation.
2500V~ Isolation Voltage.
Anti-Parallel Diode.
High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristi.

📁 IXYN30N170CV1 Similar Datasheet

IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

IXYN300N65A3 - Ultra Low-Vsat PT IGBT
IXYN100N120B3H1 - IGBT
IXYN100N120C3 - High-Speed IGBT
IXYN100N120C3H1 - High-Speed IGBT
IXYN100N65A3 - IGBT
IXYN100N65B3D1 - Diode

Published: Feb 16, 2025 |