IXYN100N65B3D1 Datasheet - IXYS

IXYN100N65B3D1 Diode

Advance Technical Information XPTTM 650V GenX3TM w/ Diode IXYN100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82.

IXYN100N65B3D1 Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* 2500V~ Isolation Voltage

* Anti-Parallel Diode

* Optimized for 10-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* High Current Handling Capability Advantages

* High Power D

IXYN100N65B3D1 Datasheet (226.27 KB)