IXYL60N450 Datasheet (IXYS) - High Voltage IGBT

IXYL60N450, High Voltage IGBT

High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V  3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Force Maximum Ratings 4500 V 4

IXYL60N450 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications