IXYK110N120C4 Datasheet - IXYS

IXYK110N120C4 IGBT

1200V XPTTM Gen 4 IGBT High Speed IGBT for up to 20-50kHz Switching IXYK110N120C4 VCES = 1200V I = 110A C110 V  2.40V CE(sat) tfi(typ) = 37ns Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL TSOLD FC Weight Test Conditions T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C .

IXYK110N120C4 Features

* Optimized for Low Switching Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Batter