IXYJ30N120C3D1 - IGBT

IXYS

Datasheet Details

Optimized for Low Switching Losses.
Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
Anti-Parallel Ultra Fast Diode.
Avalanche Rated Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCE.

📁 IXYJ30N120C3D1 Similar Datasheet

Other Datasheets by IXYS

Published: Aug 19, 2016 |