IXYH120N65B3 Datasheet (IXYS)

IXYH120N65B3, IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYH120N65B3 VCES = 650V IC110 = 120A VCE(sat)  1.90V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TV

IXYH120N65B3 Features

* Optimized for 10-30kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS