IXYF40N450 Datasheet (IXYS) - High Voltage IGBT

IXYF40N450, High Voltage IGBT

Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  4500V 32A 3.9V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Fo

IXYF40N450 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications