IXXH60N65C4 Datasheet (IXYS) - Extreme Light Punch Through IGBT

IXXH60N65C4, Extreme Light Punch Through IGBT

XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH60N65C4 VCES = 650V IC110 = 60A V CE(sat)  2.4V tfi(typ) = 42ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82

IXXH60N65C4 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* 175°C Rated

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives