IXTQ200N06P Datasheet (IXYS)

IXTQ200N06P, Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS VDGR VGS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL T SOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ

IXTQ200N06P Features

* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V