IXTC96N25T Datasheet - IXYS

IXTC96N25T Power MOSFET

Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A 31mΩ N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol VDSS VDGR VGSM ID25 IDM IAS EAS PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, pulse width limited by TJM 40 A 230 A TC = 25°C TC = .

IXTC96N25T Features

* z Silicon chip on Direct-Copper-Bond substrate z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF) Advantages z Easy assembly z Space savings z High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μ

IXTC96N25T Datasheet (153.02 KB)