IXTC13N50 Datasheet (IXYS Corporation)

IXTC13N50, Power MOSFET

Power MOSFET ISOPLUS220TM IXTC 13N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Symbol VDSS VGS(th) IGSS IDSS ISOPLUS220TM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ E Continuous Transient T TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C E TC = 25°C IS ≤ IDM, di/dt

IXTC13N50 Features

* D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Lowdraintotabcapacitance(