IXTC250N075T Datasheet (IXYS Corporation)

IXTC250N075T, Power MOSFET

Preliminary Technical Information TrenchMVTM IXTC250N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 75 128 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 75 V 75 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC =

IXTC250N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off