IXTA6N100D2HV Power MOSFET

IXYS

IXTA6N100D2HV Description

High Voltage Depletion Mode Power MOSFET IXTA6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM T.

IXTA6N100D2HV Features

*  High Voltage package
* High Blocking Voltage
* Normally ON Mode
*  High Voltage package Advantages
* Easy to Mount
* Space Savings

IXTA6N100D2HV Applications

* Audio Amplifiers
* Start-Up Circuits
* Protection Circuits
* Ramp Generators
* Current Regulators
* Active Loads © 2019 IXYS CORPORATION, All Rights Reserved DS100805B(11/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs V

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Datasheet Details

Part number: IXTA6N100D2HV
Manufacturer: IXYS
File Size: 224.94 KB
Datasheet: IXTA6N100D2HV-IXYS.pdf
Description: Power MOSFET

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Power MOSFET IXYS

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