IXTA60N10T, IXTP60N10T Power MOSFET

IXYS

IXTA60N10T Description

TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL.

IXTA60N10T Features

* Ultra-Low On Resistance
* Avalanche Rated
* Low Package Inductance - Easy to Drive and to Protect
* 175C Operating Temperature
* Fast Intrinsic Diode Advantages
* Easy to Mount
* Space Savings

IXTA60N10T Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems
* DC/DC Converters and Off-line UPS
* Primary Switch for 24V and 48V Systems
* Distributed Power Architechtures and VRMs
* Electronic Valve Train Systems
* High Current Switching Applications
* High Voltage Synchro

📥 Download Datasheet

IXTA60N10T Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTA60N10T, IXTP60N10T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: IXTA60N10T, IXTP60N10T
Manufacturer: IXYS
File Size: 288.95 KB
Datasheet: IXTP60N10T_IXYS.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTA60N10T, IXTP60N10T.
Please refer to the document for exact specifications by model.

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